Nexperia · FETs & Power MOSFETs · MPN GAN140-650EBEZ
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 3.5nC@6V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 113W |
| RDS(on) | 140mΩ@6V |
| Type | N-Channel |
650V 17A 2.5V 113W 140mΩ@6V N-Channel Single FETs, MOSFETs RoHS