Nexperia · FETs & Power MOSFETs · MPN GAN080-650EBEZ
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 6.2nC |
| Current - Continuous Drain(Id) | 29A |
| Output Capacitance(Coss) | 70pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 240W |
| Technology | E-mode |
| RDS(on) | 60mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF |
| Number | - |
| Input Capacitance(Ciss) | 225pF |
650V 29A 1.7V 240W 60mΩ DFN8080-8 Single FETs, MOSFETs RoHS