Nexperia · FETs & Power MOSFETs · MPN GAN063-650WSAQ
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| Gate Charge(Qg) | 15nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 34.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Technology | E-mode |
| Pd - Power Dissipation | 143W |
| RDS(on) | 50mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1000pF |
650V 34.5A 3.9V 143W 50mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS