Nexperia · FETs & Power MOSFETs · MPN GAN041-650WSBQ
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| Gate Charge(Qg) | 22nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 147pF |
| Current - Continuous Drain(Id) | 47.2A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 187W |
| Technology | - |
| RDS(on) | 35mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | - |
| Input Capacitance(Ciss) | 1500pF |
650V 47.2A 3.9V 187W 35mΩ TO-247-3 Single FETs, MOSFETs RoHS