Nexperia · FETs & Power MOSFETs · MPN BUK9Y12-100E,115
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| Gate Charge(Qg) | 64nC@5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 238W |
| Reverse Transfer Capacitance (Crss@Vds) | 214pF |
| RDS(on) | 9.5mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.973nF |
100V 85A 2.1V 238W 9.5mΩ@5V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS