Nexperia · FETs & Power MOSFETs · MPN BUK9Y104-100B,115
4.0/5 from 1 engineer review.
| Gate Charge(Qg) | 11nC@5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 14.8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.15V |
| Pd - Power Dissipation | 59W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 99mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.139nF |
100V 14.8A 2.15V 59W 99mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS