Nexperia · FETs & Power MOSFETs · MPN BUK969R3-100E,118
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| Gate Charge(Qg) | 94.3nC@5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 263W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 7.49mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.65nF |
100V 100A 2.1V 263W 7.49mΩ@5V 1 N-channel D2PAK Single FETs, MOSFETs RoHS