Nexperia · FETs & Power MOSFETs · MPN BUK7Y7R8-80E
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| Gate Charge(Qg) | 63.3nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 238W |
| Reverse Transfer Capacitance (Crss@Vds) | 272pF |
| RDS(on) | 7.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.347nF |
80V 100A 2.4V 238W 7.8mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS