Nexperia · FETs & Power MOSFETs · MPN BUK755R4-100E,127
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| Gate Charge(Qg) | 180nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 349W |
| Reverse Transfer Capacitance (Crss@Vds) | 546pF |
| RDS(on) | 4.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.86nF |
100V 120A 3V 349W 4.1mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS