Nexperia BST82,235

Nexperia · FETs & Power MOSFETs · MPN BST82,235

No reviews yet — be the first to review Nexperia BST82,235.

Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)190mA
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation830mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)10Ω@5V
Number1 N-channel
Input Capacitance(Ciss)40pF

Technical details

100V 190mA 2V 830mW 10Ω@5V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs