Nexperia BST82,215

Nexperia · FETs & Power MOSFETs · MPN BST82,215

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Output Capacitance(Coss)8.5pF
Current - Continuous Drain(Id)190mA
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation830mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)10Ω@5V
Number1 N-channel
Input Capacitance(Ciss)40pF
Vgs±20V

Technical details

N-Channel 100V 190mA 830mW Surface Mount SOT-23

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