Nexperia · FETs & Power MOSFETs · MPN BSS84AKQBZ
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| Drain to Source Voltage | 50V |
|---|---|
| Gate Charge(Qg) | 600pC@10V |
| Output Capacitance(Coss) | 3.5pF |
| Current - Continuous Drain(Id) | 270mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 960mW |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF |
| RDS(on) | 7.5Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 23.2pF |
| Type | P-Channel |
P-Channel 50V 270mA 960mW Surface Mount DFN1110D-3