Nexperia BSS192,135

Nexperia · FETs & Power MOSFETs · MPN BSS192,135

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Specifications

Gate Charge(Qg)1.9nC@10V
Drain to Source Voltage240V
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation560mW;12.5W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)10Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)90pF

Technical details

240V 200mA 2.8V 10Ω@10V 1 P-Channel SOT-89-3 Single FETs, MOSFETs RoHS

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