Nexperia BSP250,115

Nexperia · FETs & Power MOSFETs · MPN BSP250,115

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)3A
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation1.65W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)250mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)250pF
TypeP-Channel

Technical details

P-Channel 30V 3A 1.65W Surface Mount SOT-223

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