Nexperia BSP130,115

Nexperia · FETs & Power MOSFETs · MPN BSP130,115

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage300V
Current - Continuous Drain(Id)350mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)4.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)100pF

Technical details

300V 350mA 2V 1.5W 4.8Ω@10V 1 N-channel SOT-223-4 Single FETs, MOSFETs RoHS

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