Nexperia BSP100,135

Nexperia · FETs & Power MOSFETs · MPN BSP100,135

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)-
Current - Continuous Drain(Id)3.2A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation8.3W
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)250pF

Technical details

30V 3.2A 2.8V 8.3W 100mΩ@10V 1 N-channel SOT-223 Single FETs, MOSFETs RoHS

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