Nexperia BSH205G2R

Nexperia · FETs & Power MOSFETs · MPN BSH205G2R

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Specifications

Gate Charge(Qg)6.5nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation890mW
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)170mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)418pF

Technical details

P-Channel 20V 2.3A 890mW Surface Mount SOT-23

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