Nexperia BSH205G2235

Nexperia · FETs & Power MOSFETs · MPN BSH205G2235

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)6.5nC@4.5V
Current - Continuous Drain(Id)2A
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation890mW
RDS(on)170mΩ@4.5V
TypeP-Channel

Technical details

20V 2A 950mV 890mW 170mΩ@4.5V P-Channel Single FETs, MOSFETs RoHS

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