Nexperia · FETs & Power MOSFETs · MPN BSH114,215
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| Gate Charge(Qg) | 4.6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 850mA |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 830mW |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 400mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 138pF |
100V 850mA 3V 830mW 400mΩ@10V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS