Nexperia BSH111BKR

Nexperia · FETs & Power MOSFETs · MPN BSH111BKR

No reviews yet — be the first to review Nexperia BSH111BKR.

Specifications

Gate Charge(Qg)500pC@4.5V
Drain to Source Voltage55V
Current - Continuous Drain(Id)210mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation364mW
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)4Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)30pF

Technical details

N-Channel 55V 210mA 364mW Surface Mount SOT-23

Related FETs & Power MOSFETs