Nexperia · FETs & Power MOSFETs · MPN BSH111BK215
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| Drain to Source Voltage | 55V |
|---|---|
| Gate Charge(Qg) | 500pC@4.5V |
| Output Capacitance(Coss) | 10pF |
| Current - Continuous Drain(Id) | 335mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 1.449W |
| RDS(on) | 4Ω@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Input Capacitance(Ciss) | 30pF |
| Type | N-Channel |
55V 335mA 1.3V 1.449W 4Ω@4.5V N-Channel Single FETs, MOSFETs RoHS