Nexperia · FETs & Power MOSFETs · MPN BSH108,215
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| Gate Charge(Qg) | 10nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 1.9A |
| Operating Temperature - | -65℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 830mW |
| RDS(on) | 120mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 190pF |
N-Channel 30V 1.9A 830mW Surface Mount SOT-23