Nexperia BF821,215

Nexperia · Transistors (BJTs) · MPN BF821,215

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)60MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO5V
DC Current Gain50
Pd - Power Dissipation250mW
Number1 PNP
typePNP
Current - Collector(Ic)50mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))800mV

Technical details

Bipolar (BJT) Transistor PNP 300V 50mA 60MHz 250mW Surface Mount SOT-23

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