Nexperia BC857RAZ

Nexperia · Transistors (BJTs) · MPN BC857RAZ

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Specifications

Current - Collector Cutoff15nA
DC Current Gain200
Pd - Power Dissipation480mW
Collector - Emitter Voltage VCEO45V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))300mV
typePNP
Current - Collector(Ic)100mA
Operating Temperature-

Technical details

200 480mW 45V PNP 100mA DFN-6-EP(1.4x1.2) Bipolar Transistor Arrays RoHS

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