Nexperia BC857QASZ

Nexperia · Transistors (BJTs) · MPN BC857QASZ

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Specifications

Current - Collector Cutoff15nA
DC Current Gain200
Pd - Power Dissipation350mW
Collector - Emitter Voltage VCEO45V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))300mV
typePNP
Current - Collector(Ic)100mA
Operating Temperature-

Technical details

200 350mW 45V PNP 100mA DFN-6(1x1) Bipolar Transistor Arrays RoHS

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