Nexperia BC856B-QVL

Nexperia · Transistors (BJTs) · MPN BC856B-QVL

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Specifications

Current - Collector Cutoff4uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO5V
DC Current Gain220
Pd - Power Dissipation250mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))250mV
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 250mW Surface Mount TO-236AB

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