Nexperia BC856-QR

Nexperia · Transistors (BJTs) · MPN BC856-QR

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Specifications

Current - Collector Cutoff1nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
DC Current Gain475
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation250mW
ConfigurationStandalone
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))75mV
Operating Temperature-65℃~+150℃

Technical details

65V 475 1 PNP PNP 100mA TSSOP-6 Single Bipolar Transistors RoHS

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