Nexperia BC850B,235

Nexperia · Transistors (BJTs) · MPN BC850B,235

No reviews yet — be the first to review Nexperia BC850B,235.

Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

45V 200 1 NPN NPN 100mA SOT-23 Single Bipolar Transistors RoHS

Related Transistors (BJTs)