Nexperia BC806-25H-QR

Nexperia · Transistors (BJTs) · MPN BC806-25H-QR

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain400
Emitter-Base Voltage VEBO8V
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))150mV;400mV
Operating Temperature-55℃~+175℃

Technical details

80V 400 1 PNP PNP 500mA SOT-23 Single Bipolar Transistors RoHS

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