Nexperia BC806-16R

Nexperia · Transistors (BJTs) · MPN BC806-16R

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO8V
DC Current Gain100
Pd - Power Dissipation250mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor PNP 80V 500mA 80MHz 250mW Surface Mount SOT-23

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