Nexperia 2N7002HSX

Nexperia · FETs & Power MOSFETs · MPN 2N7002HSX

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Specifications

Current - Continuous Drain(Id)320mA
RDS(on)1.6Ω@10V
Pd - Power Dissipation420mW
Gate Threshold Voltage (Vgs(th))2.4V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)4pF
Number2 N-Channel
Input Capacitance(Ciss)34pF
Gate Charge(Qg)500pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)7pF

Technical details

320mA 1.6Ω@10V 420mW 2.4V 2 N-Channel TO-236AB FET, MOSFET Arrays RoHS

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