NCE NCES170P01KT

NCE · FETs & Power MOSFETs · MPN NCES170P01KT

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Specifications

Configuration-
Drain to Source Voltage1.7kV
Gate Charge(Qg)10.9nC
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)8.9pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.8V
Pd - Power Dissipation110W
RDS(on)
Reverse Transfer Capacitance (Crss@Vds)1.3pF
Number1 N-channel
Input Capacitance(Ciss)132pF

Technical details

1.7kV 7A 4.8V 110W 1Ω 1 N-channel N-Channel TO-247-3L Single FETs, MOSFETs RoHS

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