NCE · FETs & Power MOSFETs · MPN NCES170P01KDH
4.0/5 from 1 engineer review.
| Configuration | - |
|---|---|
| Drain to Source Voltage | 1.7kV |
| Gate Charge(Qg) | 10.9nC |
| Current - Continuous Drain(Id) | 6.7A |
| Output Capacitance(Coss) | 8.9pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.8V |
| Pd - Power Dissipation | 101W |
| RDS(on) | 1Ω |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 132pF |
1.7kV 6.7A 4.8V 101W 1Ω 1 N-channel N-Channel TO263-7LHC Single FETs, MOSFETs RoHS