NCE NCES120P160T

NCE · FETs & Power MOSFETs · MPN NCES120P160T

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Specifications

Configuration-
Drain to Source Voltage1.2kV
Gate Charge(Qg)26.5nC
Current - Continuous Drain(Id)17A
Output Capacitance(Coss)66pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.8V
Pd - Power Dissipation88W
RDS(on)160mΩ
Reverse Transfer Capacitance (Crss@Vds)16pF
Number1 N-channel
Input Capacitance(Ciss)618pF

Technical details

1.2kV 17A 4.8V 88W 160mΩ 1 N-channel N-Channel TO-247-3L Single FETs, MOSFETs RoHS

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