NCE · FETs & Power MOSFETs · MPN NCES120P160QD
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Gate Charge(Qg) | 26.5nC |
| Current - Continuous Drain(Id) | 20A |
| Output Capacitance(Coss) | 66pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.8V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 160mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 618pF |
1.2kV 20A 4.8V 125W 160mΩ 1 N-channel N-Channel QDPAK-22L Single FETs, MOSFETs RoHS