NCE NCES120P080D7

NCE · FETs & Power MOSFETs · MPN NCES120P080D7

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Specifications

Configuration-
Drain to Source Voltage1.2kV
Gate Charge(Qg)55.2nC
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.8V
Pd - Power Dissipation174W
Reverse Transfer Capacitance (Crss@Vds)3.6pF
RDS(on)103mΩ
Number1 N-channel
Input Capacitance(Ciss)1.02nF

Technical details

1.2kV 32A 4.8V 174W 103mΩ 1 N-channel N-Channel TO-263-7L Single FETs, MOSFETs RoHS

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