NCE · FETs & Power MOSFETs · MPN NCES120P040T4N
No reviews yet — be the first to review NCE NCES120P040T4N.
| Configuration | - |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Gate Charge(Qg) | 107nC |
| Output Capacitance(Coss) | 86pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.8V |
| Pd - Power Dissipation | 326W |
| RDS(on) | 52mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 4.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.21nF |
1.2kV 65A 4.8V 326W 52mΩ 1 N-channel N-Channel TO-247-4LP Single FETs, MOSFETs RoHS