NCE NCES120P040QD

NCE · FETs & Power MOSFETs · MPN NCES120P040QD

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Specifications

Configuration-
Drain to Source Voltage1.2kV
Gate Charge(Qg)107nC
Output Capacitance(Coss)86pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.8V
Pd - Power Dissipation326W
RDS(on)40mΩ
Reverse Transfer Capacitance (Crss@Vds)4.3pF
Number-
Input Capacitance(Ciss)2.21nF

Technical details

1.2kV 65A 4.8V 326W 40mΩ N-Channel QDPAK-22L Single FETs, MOSFETs RoHS

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