NCE NCES120P020QD

NCE · FETs & Power MOSFETs · MPN NCES120P020QD

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Specifications

Configuration-
Drain to Source Voltage1.2kV
Gate Charge(Qg)182nC
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)127A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.8V
Pd - Power Dissipation625W
RDS(on)20mΩ
Reverse Transfer Capacitance (Crss@Vds)18.9pF
Number1 N-channel
Input Capacitance(Ciss)5.99nF

Technical details

1.2kV 127A 4.8V 625W 20mΩ 1 N-channel N-Channel QDPAK-22L Single FETs, MOSFETs RoHS

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