NCE · FETs & Power MOSFETs · MPN NCES120P013T4N
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Gate Charge(Qg) | 236nC |
| Output Capacitance(Coss) | 270pF |
| Current - Continuous Drain(Id) | 158A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.8V |
| Pd - Power Dissipation | 652W |
| RDS(on) | 13mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.3nF |
1.2kV 158A 4.8V 652W 13mΩ 1 N-channel N-Channel TO-247-4LP Single FETs, MOSFETs RoHS