NCE NCES120P013T4

NCE · FETs & Power MOSFETs · MPN NCES120P013T4

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Specifications

Configuration-
Drain to Source Voltage1.2kV
Gate Charge(Qg)210nC
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)158A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.8V
Pd - Power Dissipation714W
RDS(on)17mΩ
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)5.2nF

Technical details

1.2kV 158A 4.8V 714W 17mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS

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