NCE · FETs & Power MOSFETs · MPN NCES090P100T4
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 900V |
| Gate Charge(Qg) | 34nC |
| Output Capacitance(Coss) | 106pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.8V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 130mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 19.9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 790pF |
900V 30A 4.8V 100W 130mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS