NCE · FETs & Power MOSFETs · MPN NCES090P050
No reviews yet — be the first to review NCE NCES090P050.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 64nC |
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 112pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.8V |
| Pd - Power Dissipation | 180W |
| RDS(on) | 50mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 4.7pF |
| Number | - |
| Input Capacitance(Ciss) | 1.68nF |
900V 50A 4.8V 180W 50mΩ N-Channel TO-220 Single FETs, MOSFETs RoHS