NCE NCEP12N12

NCE · FETs & Power MOSFETs · MPN NCEP12N12

No reviews yet — be the first to review NCE NCEP12N12.

Specifications

Drain to Source Voltage120V
Gate Charge(Qg)45nC
Current - Continuous Drain(Id)63A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation100W
RDS(on)12.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)19pF
Input Capacitance(Ciss)2.23nF
TypeN-Channel

Technical details

120V 63A 4V 100W 12.5mΩ@10V N-Channel TO-220 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs