NCE NCEP11N10AS

NCE · FETs & Power MOSFETs · MPN NCEP11N10AS

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Specifications

Gate Charge(Qg)54nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.4W
RDS(on)16mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)27pF
Input Capacitance(Ciss)2.6nF
TypeN-Channel

Technical details

100V 12A 2.5V 3.4W 16mΩ@4.5V N-Channel SOP-8 Single FETs, MOSFETs RoHS

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