NCE NCEP080N10

NCE · FETs & Power MOSFETs · MPN NCEP080N10

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Specifications

Gate Charge(Qg)53nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)7.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.07nF
TypeN-Channel

Technical details

N-Channel 100V 75A 120W Through Hole TO-220

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