NCE · FETs & Power MOSFETs · MPN NCEP068N10K
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| Gate Charge(Qg) | 60nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 335pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF |
| RDS(on) | 6.8mΩ@10V |
| Input Capacitance(Ciss) | 3.6nF |
| Type | N-Channel |
100V 80A 4V 125W 6.8mΩ@10V N-Channel TO-252-2 Single FETs, MOSFETs RoHS