NCE NCEP060N10G

NCE · FETs & Power MOSFETs · MPN NCEP060N10G

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)74nC@10V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)6mΩ@10V
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

100V 100A 4V 115W 6mΩ@10V N-Channel PDFN-8(5x5.8) Single FETs, MOSFETs RoHS

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