NCE NCEP050N85

NCE · FETs & Power MOSFETs · MPN NCEP050N85

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage85V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)4.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.9nF

Technical details

85V 120A 3V 160W 4.7mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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