NCE NCEP039N10MD

NCE · FETs & Power MOSFETs · MPN NCEP039N10MD

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Specifications

Gate Charge(Qg)125nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)135A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation220W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)3.9mΩ@10V
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

100V 135A 4V 220W 3.9mΩ@10V N-Channel TO-263-2L Single FETs, MOSFETs RoHS

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